Lab Introduction

Intro-20180612

Exploratory Device Research Lab (EDRL) is dedicated to explore  groundbreaking device ideas based on exotic materials and/or novel concepts of device operations. We adopt various existing material and device simulation tools as well as develop our own in-house device simulators to investigate revolutionary device ideas to extend Moore’s law or to open completely new paradigm of computing after the end of Moore’s law.

Recent News

New journal publication: Advanced Electronic Materials

Posted on 17 Mar 2020
T. Das, D. Seo, J. E. Seo, J. Chang, “Tunable Current Transport in PdSe2 Via Layer-by-Layer Thickness Modulation by Mild Plasma”, accepted for publication in Advanced Electronic Materials.

Jeonghyeon Kim starts her graduate study in EDRL

Posted on 02 Mar 2020
She got her B.S. with honors from UNIST and had been working in EDRL as a researcher.

New journal publication: IEEE Transaction on Electron Devices

Posted on 28 Nov 2019
J. E. Seo, D. Seo, J. Chang, “Theoretical Analysis on Ballistic Current Transport in Monolayer Black Arsenic MOSFETs”, accepted for publication in IEEE Transaction on Electron Devices. [Link]

Eunyeong Yang joins EDRL.

Posted on 01 Sep 2019
Eunyeong Yang starts her graduate study in EDRL. She got her B.S. from UNIST.

New journal publication: Nature Electronics

Posted on 05 Jul 2019
J. W. Jeong, Y. E. Choi, W. S. Kim, J. H. Park, S. Kim, S. Shin, K. J. Lee, J. Chang, S. J. Kim, and K. R. Kim, “Tunneling-based ternary metal-oxide-semiconductor technology”, accepted for publication in Nature Electronics. [Link]

AWAD 2019

Posted on 02 Jul 2019
Dongwook presented his recent work ‘Thickness-Dependent Transport in PdSe2 Field-Effect Transistors’.

Jeonghyeon Kim joins EDRL.

Posted on 27 May 2019
Jeonghyeon joins as a researcher in EDRL. She got her B.S. with honors from UNIST.

Jae Eun Seo joins EDRL.

Posted on 01 Mar 2019
Jae Eun starts his graduate study in EDRL. He got his B.S. with honors from UNIST.

New journal publication: Scientific Reports

Posted on 16 Feb 2019
D. Seo, J. Chang, “Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene”, accepted for publication in Scientific Reports. [Link]