Exploratory Device Research Lab
Exploratory Device Research Lab (EDRL) is dedicated to explore groundbreaking device ideas based on exotic materials and/or novel concepts of device operations.
New journal publication: IEEE Electron Device letters
Posted on 19 Sep 2020
S. Kim, J. Y. Park, J. Chang, K. R. Kim, “Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor”, accepted for publication in IEEE Electron Device Letters. [Link]
Il Hyeon Jeong joins EDRL.
Posted on 31 Aug 2020
Il Hyeon starts his graduate study in EDRL. He got his B.S. from UNIST.
New journal publication: Nanoscale
Posted on 15 Jun 2020
E. Yang, J. E. Seo, D. Seo, J. Chang, “Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2”, accepted for publication in Nanoscale. [Link]
New journal publication: Advanced Electronic Materials
Posted on 17 Mar 2020
T. Das, D. Seo, J. E. Seo, J. Chang, “Tunable Current Transport in PdSe2 Via Layer-by-Layer Thickness Modulation by Mild Plasma”, accepted for publication in Advanced Electronic Materials. [Link]
Jeonghyeon Kim starts her graduate study in EDRL
Posted on 02 Mar 2020
She got her B.S. with honors from UNIST and had been working in EDRL as a researcher.
New journal publication: IEEE Transaction on Electron Devices
Posted on 28 Nov 2019
J. E. Seo, D. Seo, J. Chang, “Theoretical Analysis on Ballistic Current Transport in Monolayer Black Arsenic MOSFETs”, accepted for publication in IEEE Transaction on Electron Devices. [Link]
Eunyeong Yang joins EDRL.
Posted on 01 Sep 2019
Eunyeong Yang starts her graduate study in EDRL. She got her B.S. from UNIST.
New journal publication: Nature Electronics
Posted on 05 Jul 2019
J. W. Jeong, Y. E. Choi, W. S. Kim, J. H. Park, S. Kim, S. Shin, K. J. Lee, J. Chang, S. J. Kim, and K. R. Kim, “Tunneling-based ternary metal-oxide-semiconductor technology”, accepted for publication in Nature Electronics. [Link]
Posted on 02 Jul 2019
Dongwook presented his recent work ‘Thickness-Dependent Transport in PdSe2 Field-Effect Transistors’.
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