Exploratory Device Research Lab (EDRL) is dedicated to explore groundbreaking device ideas based on exotic materials and/or novel concepts of device operations. We adopt various existing material and device simulation tools as well as develop our own in-house device simulators to investigate revolutionary device ideas to extend Moore’s law or to open completely new paradigm of computing after the end of Moore’s law.
J. W. Jeong, Y. E. Choi, W. S. Kim, J. H. Park, S. Kim, S. Shin, K. J. Lee, J. Chang, S. J. Kim, and K. R. Kim, “Tunneling-based ternary metal-oxide-semiconductor technology”, accepted for publication in Nature Electronics. [Link]
D. Seo, J. Chang, “Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene”, accepted for publication in Scientific Reports. [Link]
Prof. Jiwon Chang co-chaired a session ‘2D materials and devices I’ in AWAD 2018 held in Kitakyushu, Japan. He also presented his recent work ‘Tunneling Field-Effect Transistors Utilizing Thickness Modulated Semiconductor to Metal Transition in Two-Dimensional Materi
J. Chang, “Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure”, accepted for publication in Nanoscale. [Link]
P. Sarangapani, C. Weber, J. Chang, S.Cea, M. Povolotskyi, G. Klimeck, T. Kubis, “Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS Schottky contacts”, accepted for publication in IEEE Trans. Nano. [Link]