Publications

Bold Our Group Member, * Corresponding Author
  1. T. DasD. Seo, J. E. SeoJ. Chang*“Tunable Current Transport ……” , submitted.
  2. J. E. Seo, D. SeoJ. Chang*“Theoretical Analysis on Ballistic Current Transport in Monolayer Black Arsenic MOSFETs” , accepted for publication in IEEE Transactions on Electron Devices[Link]
  3. J. W. Jeong, Y. E. Choi, W. S. Kim, J. H. Park, S. Kim, S. Shin, K. J. Lee, J. Chang, S. J. Kim, and K. R. Kim*, “Tunneling-based ternary metal-oxide-semiconductor technologyNature Electronics 2, 307–312 (2019). [Link]
  4. D. Seo, J. Chang*“Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene”, Scientific Reports 9, 3988 (2019). [Link]
  5. J. Chang*Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure”, Nanoscale 10, 13652-13660 (2018). [Link]

    Before UNIST
  6. P. Sarangapani*, C. Weber, J. Chang, S. Cea, M. Povolotskyi, G. Klimeck, T. Kubis, “Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS Schottky contacts”, IEEE Transactions on Nanotechnology, vol. 17, no. 5, pp. 968-973 (2018) [Link]
  7. A. Valsaraj*, J. Chang, A. Rai, L. F. Register, E. Tutuc, S. K. Banerjee, “Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide”, 2D Materials 2 (4), 045009 (2015). [Link]
  8. A. Rai*, A. Valsaraj, H. CP Movva, A. Roy, R. Ghosh, S. Sonde, S. Kang, J. Chang, T. Trivedi, R. Dey, S. Guchhait, S. Larentis, L. F. Register, E. Tutuc, S. K. Banerjee, “Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation”, Nano Letters 15 (7), 4329 (2015). [Link]
  9. J. Chang*, “Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors“, Journal of Applied Physics 117, 214502 (2015). [Link]
  10.  J. Chang*, “Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs“, Journal of Physics D: Applied Physics  48, 145101 (2015). [Link]
  11. J. Chang*, C. Hobbs, “Theoretical Study of Phosphorene Tunneling Field Effect Transistors”, Applied Physics Letters 106, 083509 (2015). [Link]
  12. J. Chang*, S. Larentis, E. Tutuc, L.F. Register, S. K. Banerjee, “Atomistic Simulation of the Electronic States of Adatoms in Monolayer MoS2”, Applied Physics Letters 104, 141603 (2014). [Link]
  13. J. Chang*, L.F. Register, S. K. Banerjee, “Ballistic Performance Comparison of Monolayer Transition Metal Dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs”, Journal of Applied Physics 115, 084506 (2014). [Link]
  14. J. Chang*, L.F. Register, S. K. Banerjee, “Atomistic Full-Band Simulations of Monolayer MoS2 Transistor”, Applied Physics Letters 103, 223509 (2013). [Link]
  15. J. Chang*, L.F. Register, S. K. Banerjee, “Topological Insulator Bi2Se3 Thin Films as an Alternative Channel Material in MOSFETs”, Journal of Applied Physics 112, 124511 (2012). [Link]
  16. J. Chang, P. Jadaun, L.F. Register, S. K. Banerjee, B. Sahu*, “Dielectric Capping Effects on Binary and Ternary Topological Insulator Surface States”, Physical Review B 84.155105 (2011). [Link]
  17. J. Chang, L. F. Register, S. K. Banerjee, B. Sahu*, “Density Functional Study of Ternary Topological Insulator Thin Films”, Physical Review B 83, 235108 (2011). [Link]
  18.  J. Chang*, A. Kapoor, L. F. Register, S. K. Banerjee, “Analytical Models of Short-Channel Double Gate JFETs”, IEEE Transactions on Electron Devices, vol. 57, no. 8, pp. 1846-1855 (2010). [Link]
Bold Our Group Member, * Corresponding Author
  1. D. Seo, J. E. Seo, T. Das, J. Y. Kwak, J. Chang*, “Thickness-Dependent Transport in PdSe2 Field-Effect-Transistors”, AWAD, Jul 1-3, 2019, Busan, Korea.
  2. J. Chang*“Tunneling Field-Effect Transistors Utilizing Thickness Modulated Semiconductor to Metal Transition in Two-Dimensional Materials”, AWAD, Jul 2-4, 2018, Kitakyushu, Japan.

    Before UNIST
  3.  P. Sarangapani*, C. Weber, J. Chang, S. Cea, R. Golizadeh-Mojarad, M. Povolotskyi, G. Klimeck, T. Kubis, “Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10−9 Ω.cm2 target ?”, IEEE-NANO, Jul 25-28, 2017, Pittsburgh, PA, U.S.A.
  4. A. Valsaraj*, J. Chang, L. F. Register, S. K. Banerjee, “Substitutional Doping of Metal Contact for Monolayer Transition Metal Dichalcogenides: a Density Functional Theory Based Study”, SISPAD, Sep 9-11, 2015, Washington DC, U.S.A.
  5. A. Valsaraj*, J. Chang, L. F. Register, S. K. Banerjee, “Density-Functional-Theory-Based study of monolayer MoS2 on Oxide”, SISPAD, Sep 9-11, 2014, Yokohama, Japan.
  6. A. Valsaraj,* J. Chang, L. F. Register, S. K. Banerjee, “DFT Study of the Effect of HfO2 on Monolayer MoS2”, ICPS, Aug 10-15, 2014, Austin, TX, U.S.A.
  7. A. Valsaraj*, J. Chang, L. F. Register, S. K. Banerjee, “Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure”, DRC, Jun 22-25 , 2014, Santa Barbara, CA, U.S.A.
  8. J. Chang*, L. F. Register, S. K. Banerjee, “Comparison of Ballistic Transport Characteristics of Monolayer Transition Metal Dichalcogenides (TMDs) MX2 (M =  Mo, W; X = S, Se, Te) n-MOSFETs”, SISPAD, Sep 3-5, 2013, Glasgow, Scotland, U.K.
  9. J. Chang*, L. F. Register, S. K. Banerjee, “Full-Band Quantum Transport Simulations of Monolayer MoS2 Transistors: Possibility of Negative Differential Resistance”, DRC, Jun 23-26 , 2013, Notre Dame, IN, U.S.A.
  10. J. Chang*, L. F. Register, S. K. Banerjee, “Computational Study of Tunnel FETs Based on Topological Insulator Bi2Se3“, Techcon 2012, Sep 10-11, 2012, Austin, TX. U.S.A. [Best in Session Paper Award]
  11. J. Chang*, L. F. Register, S. K. Banerjee, “Atomistic Quantum Transport Simulation of Topological Insulator Bi2Se3 Tunnel FETs”, SISPAD, Sep 5-7, 2012, Denver, CO, U.S.A.
  12. J. Chang*, L. F. Register, S. K. Banerjee, “Possible Applications of Topological Insulator for Tunnel FETs”, DRC, Jun 18-20 , 2012, University Park, PA, U.S.A.
  13. J. Chang*, L. F. Register, S. K. Banerjee, B. Sahu, “Thin Film Electronic Properties of Ternary Topological Insulator”, 2011 MRS Fall Meeting, Nov 28-Dec 2 , 2011, Boston, MA, U.S.A.
  14. J. Chang*, L. F. Register, S. K. Banerjee, B. Sahu, “Effect of Dielectric Materials on the Topological Insulator Bi2Se3 Surface States“, Techcon 2011, Sep 12-13, 2011, Austin, TX. U.S.A.
  15. B. Sahu*, J. Chang, P. Jadaun, L. F. Register, S. K. Banerjee, A. H. MacDonald, “Surface States of Three-Dimensional Topological Insulators: How Robust are They?“, 2011 MRS Spring Meeting, Apr 25-29, 2011, San Francisco, CA, U.S.A.
  16. J. Chang*, L. F. Register, S. K. Banerjee, B. Sahu, “Effect of Dielectric Materials on the Topological Insulator Bi2Se3 Surface States”, 2011 APS March Meeting, Mar 21-25 , 2011, Dallas, TX, U.S.A.

 

  1. 장지원, “전계효과 트랜지스터 및 그 제조방법” (출원).
  2. 장지원, “널링 전계효과 트랜지스터 및 그 제조방법” (출원).
  3. S. K. Banerjee, L. F. Register, A. MacDonald, B. R. Sahu, P. Jadaun, J. Chang, “Topological insulator-based field-effect transistor”, U.S. Patent 20120273763, Nov 1, 2012.