Publications

Bold Our Group Member, * Corresponding Author

  1. T. DasD. Seo, J. E. SeoJ. Chang*“Tunable Current Transport ……” , submitted.
  2. J. E. Seo, D. SeoJ. Chang*“Theoretical Analysis on Ballistic Current Transport in Monolayer Black Arsenic MOSFETs” , accepted for publication in IEEE Transactions on Electron Devices.
  3. J. W. Jeong, Y. E. Choi, W. S. Kim, J. H. Park, S. Kim, S. Shin, K. J. Lee, J. Chang, S. J. Kim, and K. R. Kim*, “Tunneling-based ternary metal-oxide-semiconductor technologyNature Electronics 2, 307–312 (2019). [Link]
  4. D. Seo, J. Chang*“Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene”, Scientific Reports 9, 3988 (2019). [Link]
  5. J. Chang*Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure”, Nanoscale 10, 13652-13660 (2018). [Link]

    Before UNIST
  6. P. Sarangapani*, C. Weber, J. Chang, S. Cea, M. Povolotskyi, G. Klimeck, T. Kubis, “Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS Schottky contacts”, IEEE Transactions on Nanotechnology, vol. 17, no. 5, pp. 968-973 (2018) [Link]
  7. A. Valsaraj*, J. Chang, A. Rai, L. F. Register, E. Tutuc, S. K. Banerjee, “Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide”, 2D Materials 2 (4), 045009 (2015). [Link]
  8. A. Rai*, A. Valsaraj, H. CP Movva, A. Roy, R. Ghosh, S. Sonde, S. Kang, J. Chang, T. Trivedi, R. Dey, S. Guchhait, S. Larentis, L. F. Register, E. Tutuc, S. K. Banerjee, “Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation”, Nano Letters 15 (7), 4329 (2015). [Link]
  9. J. Chang*, “Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors“, Journal of Applied Physics 117, 214502 (2015). [Link]
  10.  J. Chang*, “Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs“, Journal of Physics D: Applied Physics  48, 145101 (2015). [Link]
  11. J. Chang*, C. Hobbs, “Theoretical Study of Phosphorene Tunneling Field Effect Transistors”, Applied Physics Letters 106, 083509 (2015). [Link]
  12. J. Chang*, S. Larentis, E. Tutuc, L.F. Register, S. K. Banerjee, “Atomistic Simulation of the Electronic States of Adatoms in Monolayer MoS2”, Applied Physics Letters 104, 141603 (2014). [Link]
  13. J. Chang*, L.F. Register, S. K. Banerjee, “Ballistic Performance Comparison of Monolayer Transition Metal Dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs”, Journal of Applied Physics 115, 084506 (2014). [Link]
  14. J. Chang*, L.F. Register, S. K. Banerjee, “Atomistic Full-Band Simulations of Monolayer MoS2 Transistor”, Applied Physics Letters 103, 223509 (2013). [Link]
  15. J. Chang*, L.F. Register, S. K. Banerjee, “Topological Insulator Bi2Se3 Thin Films as an Alternative Channel Material in MOSFETs”, Journal of Applied Physics 112, 124511 (2012). [Link]
  16. J. Chang, P. Jadaun, L.F. Register, S. K. Banerjee, B. Sahu*, “Dielectric Capping Effects on Binary and Ternary Topological Insulator Surface States”, Physical Review B 84.155105 (2011). [Link]
  17. J. Chang, L. F. Register, S. K. Banerjee, B. Sahu*, “Density Functional Study of Ternary Topological Insulator Thin Films”, Physical Review B 83, 235108 (2011). [Link]
  18.  J. Chang*, A. Kapoor, L. F. Register, S. K. Banerjee, “Analytical Models of Short-Channel Double Gate JFETs”, IEEE Transactions on Electron Devices, vol. 57, no. 8, pp. 1846-1855 (2010). [Link]

Bold Our Group Member, * Corresponding Author

  1. D. Seo, J. E. Seo, T. Das, J. Y. Kwak, J. Chang*, “Thickness-Dependent Transport in PdSe2 Field-Effect-Transistors”, AWAD, Jul 1-3, 2019, Busan, Korea.
  2. J. Chang*“Tunneling Field-Effect Transistors Utilizing Thickness Modulated Semiconductor to Metal Transition in Two-Dimensional Materials”, AWAD, Jul 2-4, 2018, Kitakyushu, Japan.

    Before UNIST
  3.  P. Sarangapani*, C. Weber, J. Chang, S. Cea, R. Golizadeh-Mojarad, M. Povolotskyi, G. Klimeck, T. Kubis, “Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10−9 Ω.cm2 target ?”, IEEE-NANO, Jul 25-28, 2017, Pittsburgh, PA, U.S.A.
  4. A. Valsaraj*, J. Chang, L. F. Register, S. K. Banerjee, “Substitutional Doping of Metal Contact for Monolayer Transition Metal Dichalcogenides: a Density Functional Theory Based Study”, SISPAD, Sep 9-11, 2015, Washington DC, U.S.A.
  5. A. Valsaraj*, J. Chang, L. F. Register, S. K. Banerjee, “Density-Functional-Theory-Based study of monolayer MoS2 on Oxide”, SISPAD, Sep 9-11, 2014, Yokohama, Japan.
  6. A. Valsaraj,* J. Chang, L. F. Register, S. K. Banerjee, “DFT Study of the Effect of HfO2 on Monolayer MoS2”, ICPS, Aug 10-15, 2014, Austin, TX, U.S.A.
  7. A. Valsaraj*, J. Chang, L. F. Register, S. K. Banerjee, “Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure”, DRC, Jun 22-25 , 2014, Santa Barbara, CA, U.S.A.
  8. J. Chang*, L. F. Register, S. K. Banerjee, “Comparison of Ballistic Transport Characteristics of Monolayer Transition Metal Dichalcogenides (TMDs) MX2 (M =  Mo, W; X = S, Se, Te) n-MOSFETs”, SISPAD, Sep 3-5, 2013, Glasgow, Scotland, U.K.
  9. J. Chang*, L. F. Register, S. K. Banerjee, “Full-Band Quantum Transport Simulations of Monolayer MoS2 Transistors: Possibility of Negative Differential Resistance”, DRC, Jun 23-26 , 2013, Notre Dame, IN, U.S.A.
  10. J. Chang*, L. F. Register, S. K. Banerjee, “Computational Study of Tunnel FETs Based on Topological Insulator Bi2Se3“, Techcon 2012, Sep 10-11, 2012, Austin, TX. U.S.A. [Best in Session Paper Award]
  11. J. Chang*, L. F. Register, S. K. Banerjee, “Atomistic Quantum Transport Simulation of Topological Insulator Bi2Se3 Tunnel FETs”, SISPAD, Sep 5-7, 2012, Denver, CO, U.S.A.
  12. J. Chang*, L. F. Register, S. K. Banerjee, “Possible Applications of Topological Insulator for Tunnel FETs”, DRC, Jun 18-20 , 2012, University Park, PA, U.S.A.
  13. J. Chang*, L. F. Register, S. K. Banerjee, B. Sahu, “Thin Film Electronic Properties of Ternary Topological Insulator”, 2011 MRS Fall Meeting, Nov 28-Dec 2 , 2011, Boston, MA, U.S.A.
  14. J. Chang*, L. F. Register, S. K. Banerjee, B. Sahu, “Effect of Dielectric Materials on the Topological Insulator Bi2Se3 Surface States“, Techcon 2011, Sep 12-13, 2011, Austin, TX. U.S.A.
  15. B. Sahu*, J. Chang, P. Jadaun, L. F. Register, S. K. Banerjee, A. H. MacDonald, “Surface States of Three-Dimensional Topological Insulators: How Robust are They?“, 2011 MRS Spring Meeting, Apr 25-29, 2011, San Francisco, CA, U.S.A.
  16. J. Chang*, L. F. Register, S. K. Banerjee, B. Sahu, “Effect of Dielectric Materials on the Topological Insulator Bi2Se3 Surface States”, 2011 APS March Meeting, Mar 21-25 , 2011, Dallas, TX, U.S.A.

  1. 장지원, “전계효과 트랜지스터 및 그 제조방법” (출원).
  2. 장지원, “널링 전계효과 트랜지스터 및 그 제조방법” (출원).
  3. S. K. Banerjee, L. F. Register, A. MacDonald, B. R. Sahu, P. Jadaun, J. Chang, “Topological insulator-based field-effect transistor”, U.S. Patent 20120273763, Nov 1, 2012.