Nanoscale Devices based on Non-Conventional Materials

Since scaling of silicon MOSFETs technology following Moore’s law will eventually encounter fundamental limits in near future, alternative materials to silicon in conventional MOSFETs or even new device concepts based on revolutionary operating schemes are required more than ever. Our lab is dedicated to uncovering pathways to extend Moore’s law by exploring novel materials and devices through various simulations, fabrication and characterizations of nanoscale devices.

  • Non-Conventional Materials

We investigate electronic properties of various exotic materials (e.g., topological insulator, transition metal dichalcogenides, phosphorene, arsenene, …) using 1st-principle simulation to identify promising materials for revolutionary device applications.

 Monolayer MoS2

     TI-BSTopological Insulator 
Surface States
MoS2BS Band Structure of Monolayer MoS2
 Calculated from 1st-Principle (DFT) and 
Tight-Binding (TB) Parameters.
  • Next-Generation Devices

We develop our own in-house device simulators based on quantum transport or boltzmann transport to investigate device performances of various revolutionay devices including different types of TFETs and ultra-thin-body FETs based on non-conventional materials.
Quantum Transport
Non-Equillibrium Green’s Function (NEGF)


○ Current from Landauer Formalism
○ Green’s Function


Boltzmann Transport
Semi-Classical Monte Carlo (SCMC)



          Position                                      Momentum
○ Carriers as Classically Localized Particles
○ Scattering Rate from Fermi’s Golden Rule


  • Experimental Demonstration of Advanced Devices

We also put lots of efforts on proving our theoretical predictions through the experimental demonstration of proposed device ideas.