Nanoscale Devices based on Non-Conventional Materials
Since scaling of silicon MOSFETs technology following Moore’s law will eventually encounter fundamental limits in near future, alternative materials to silicon in conventional MOSFETs or even new device concepts based on revolutionary operating schemes are required more than ever. Our lab is dedicated to uncovering pathways to extend Moore’s law by exploring novel materials and devices through various simulations, fabrication and characterizations of nanoscale devices.
We investigate electronic properties of various exotic materials (e.g., topological insulator, transition metal dichalcogenides, phosphorene, arsenene, …) using 1st-principle simulation to identify promising materials for revolutionary device applications.
Theoretical Investigation of Next-Generation Devices
We develop our own in-house device simulators based on quantum transport or boltzmann transport to investigate device performances of various revolutionay devices including different types of TFETs and ultra-thin-body FETs based on non-conventional materials.
Non-Equillibrium Green’s Function (NEGF)
Semi-Classical Monte Carlo (SCMC)
Experimental Demonstration of Next-Generation Devices